abb switzerland ltd, semiconductors reserves the right to change specifications without notice. v rrm = 4500 v i f(av)m = 1440 a i fsm = 2510 3 a v (t0) = 1.75 v r t = 0.88 m w v dclink = 2800 v fast recovery diode 5sdf 10h4520 doc. no. 5sya1170-00 march 05 low temperature bonding technology industry standard housing cosmic radiation withstand rating low on-state and switching losses optimized for snubberless operation blocking maximum rated values 1) parameter symbol conditions value unit repetitive peak reverse voltage v rrm f = 50 hz, t p = 10ms, t vj = 140c 4500 v permanent dc voltage for 100 fit failure rate v dclink ambient cosmic radiation at sea level in open air. (100% duty) 2800 v permanent dc voltage for 100 fit failure rate v dclink ambient cosmic radiation at sea level in open air. (5% duty) 3200 v characteristic values parameter symbol conditions min typ max unit repetitive peak reverse current i rrm v r = v rrm , t vj = 140c 100 ma mechanical data maximum rated values 1) parameter symbol conditions min typ max unit mounting force f m 36 40 46 kn acceleration a device unclamped 50 m/s 2 acceleration a device clamped 200 m/s 2 characteristic values parameter symbol conditions min typ max unit weight m 0.83 kg housing thickness h 25.8 26.1 mm surface creepage distance d s 33 mm air strike distance d a 20 mm 1) maximum rated values indicate limits beyond which damage to the device may occur
5sdf 10h4520 abb switzerland ltd, semiconductors reserves the right to change specifications without notice. doc. no. 5sya1170-00 march 05 page 2 of 7 on-state maximum rated values 1) parameter symbol conditions min typ max unit max. average on-state current i f(av)m half sine wave, t c = 70 c 1440 a max. rms on-state current i f(rms) 2260 a max. peak non-repetitive surge current i fsm 2510 3 a limiting load integral i 2 t t p = 10 ms, t vj = 140c, v r = 0 v 3.1210 6 a 2 s max. peak non-repetitive surge current i fsm 1610 3 a limiting load integral i 2 t t p = 30 ms, t vj = 140c, v r = 0 v 3.8410 6 a 2 s characteristic values parameter symbol conditions min typ max unit on-state voltage v f i f = 2500 a, t vj = 140c 3.1 3.8 v threshold voltage v (t0) 1.75 v slope resistance r t t vj = 140c i f = 500...2500 a 0.88 m w turn-on characteristic values parameter symbol conditions min typ max unit di f /dt = 600 a/s, t vj = 140c 80 v peak forward recovery voltage v frm di f /dt = 3000 a/s, t vj = 140c 250 v turn-off maximum rated values 1) parameter symbol conditions min typ max unit max. decay rate of on-state current di/dt crit i fm = 4000 a, t vj = 140 c v dclink = 2800 v 600 a/ m s characteristic values parameter symbol conditions min typ max unit reverse recovery current i rm 1600 a reverse recovery charge q rr 5600 c turn-off energy e rr i fm = 3300 a, v dc-link = 2800 v -di f /dt = 600 a/s, l cl = 300 nh c cl = 10 f, r cl = 0.65 w , t vj = 140c, d cl = 5sdf 10h4520 9.5 j
5sdf 10h4520 abb switzerland ltd, semiconductors reserves the right to change specifications without notice. doc. no. 5sya1170-00 march 05 page 3 of 7 thermal maximum rated values 1) parameter symbol conditions min typ max unit operating junction temperature range t vj 0 140 c storage temperature range t stg -40 140 c characteristic values parameter symbol conditions min typ max unit thermal resistance junction to case r th(j-c) double-side cooled f m = 36...46 kn 10 k/kw r th(j-c)a anode-side cooled f m = 36...46 kn 18 k/kw r th(j-c)c cathode-side cooled f m = 36...46 kn 22 k/kw thermal resistance case to heatsink r th(c-h) double-side cooled f m = 36...46 kn 3 k/kw r th(c-h) single-side cooled f m = 36...46 kn 6 k/kw analytical function for transient thermal impedance: ) e - (1 r = (t) z n 1 i t/ - i th c) - th(j ? = i t i 1 2 3 4 r th i (k/kw) 6.599 2.148 1.011 0.249 t i (s) 0.5067 0.0458 0.0054 0.0007 fig. 1 transient thermal impedance junction-to- case.
5sdf 10h4520 abb switzerland ltd, semiconductors reserves the right to change specifications without notice. doc. no. 5sya1170-00 march 05 page 4 of 7 max. on-state characteristic model: v f 25 f tvj f tvj f tvj tvj i d i c i b a + + + + = ) 1 ln( valid for i f = 300 ? 30000 a max. on-state characteristic model: v f 140 f tvj f tvj f tvj tvj i d i c i b a + + + + = ) 1 ln( valid for i f = 300 ? 30000 a a 25 b 25 c 25 d 25 a 140 b 140 c 140 d 140 915.5010 -3 347.2010 -6 202.510 -3 0.0010 0 -1.8710 0 353.5010 -6 609.2010 -3 0.0010 0 fig. 2 max. on-state voltage characteristics fig. 3 max. on-state voltage characteristics fig. 4 surge on-state current vs. pulse length. half- sine wave. fig. 5 surge on-state current vs. number of pulses. half-sine wave, 10 ms, 50hz
5sdf 10h4520 abb switzerland ltd, semiconductors reserves the right to change specifications without notice. doc. no. 5sya1170-00 march 05 page 5 of 7 fig. 6 upper scatter range of turn-off energy per pulse vs. turn-off current. fig. 7 upper scatter range of turn-off energy per pulse vs reverse current rise rate. fig. 8 upper scatter range of repetitive reverse recovery charge vs reverse current rise rate. fig. 9 upper scatter range of reverse recovery current vs reverse current rise rate.
5sdf 10h4520 abb switzerland ltd, semiconductors reserves the right to change specifications without notice. doc. no. 5sya1170-00 march 05 page 6 of 7 fig. 10 max. turn-off energy per pulse vs. on-state voltage. fig. 11 diode safe operating area v fr di f /dt i f (t) i f (t) v f (t) t fr t fr (typ) 10 s q rr i rm -di f /dt v f (t), i f (t) v f (t) v r (t) t fig. 12 general current and voltage waveforms. l cl l i r s l load dut c cl v lc i f d cl fig. 13 test circuit.
5sdf 10h4520 abb switzerland ltd, semiconductors reserves the right to change specifications without notice. abb switzerland ltd doc. no. 5sya1170-00 march 05 semiconductors fabrikstrasse 3 ch-5600 lenzburg, switzerland telephone +41 (0)58 586 1419 fax +41 (0)58 586 1306 email abbsem@ch.abb.com internet www.abb.com/semiconductors fig. 14 outline drawing. all dimensions are in millimeters and represent nominal values unless stated otherwise. related application notes: doc. nr titel 5sya 2036 recommendations regarding mechanical clamping of press pack high power semiconductors please refer to http://www.abb.com/semiconductors for actual versions.
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